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InfrastructureIon-beam etching lithography

Ion-beam etching lithography

ion-bean etching patterning system

Model 683 Met-Etch (Gatan). It is used to produce nano- and micro- patterning of thin films, by removing the parts not covered by a resist.

Main specifications:

  • Etching gas: Argon or Iodine
  • Eliminates or complements 'Wet chemical etching'

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Page last modified on February 20, 2018, at 08:16 PM.