Sputtering system for thin film growth
- Synthesis of thin films deposited on monocrystal substrates.
- Films formed by atoms extracted from a target (YBCO) of the material we want to grow, bombing with ions generated by the application of a high voltage (1000 V aprox) on a low pressured gas (1 Torr aprox), in this case oxygen.
- The film grown maintains the same stoichiometric composition as the target's material.
- Reactive atmosphere.
- Temperature of the substrate for deposition up to 850 oC.
- Oxygen pressure: 1.5 Torr (aprox).
- Pulverization power: 5 W/cm2 (aprox).
- Pulverization current: 400 mA (aprox).
- Pressures down to mbar.
- Possibility of using 2 targets.
- Layers growing velocity of 50 nm/hour.
- Superficial dimension of 1x1 cm2.
- Generation of metallic and ceramic layers.
- Possibility of growing multilayers.
- The LBTS has 2 sputtering systems. One of them permits the motorized positioning of the substrate, and the other has a pre-chamber and a chamber of high vacuum.